
YENJI
IRLML2502 is a lower-voltage SOT-23 N-MOS option for relaxed 20V designs.
AO3400-HXY is a 30V 5.8A SOT-23 N-channel MOSFET. Listed alternates need review because pinout is not verified and key ratings differ.
VDS, ID, or RDS differ.
SOT-23 matches, pinout absent.
Discrete MOSFET.
Lifecycle varies.
Direct replacement for AO3400-HXY should use only Datasheet verified or Strong match candidates; many approved options still require engineering review.
Use IRLML2502 or SI2300 only in derated low-voltage designs; otherwise seek a closer 30V 5.8A SOT-23 N-MOS.
Electrical derating and unverified pinout.

YENJI
IRLML2502 is a lower-voltage SOT-23 N-MOS option for relaxed 20V designs.
| Feature / factor | AO3400-HXY | IRLML2502 | SI2300 | FS2310 | Compatibility / risk |
|---|---|---|---|---|---|
| Package | SOT-23 | SOT-23 | SOT-23 | SOT-23 | SOT-23 — same package; SI2300: same package; FS2310: same package; AO3422: same package |
| Pinout | 3-pin GDS unknown | 3-pin GDS unknown | 3-pin GDS unknown | 3-pin GDS unknown | 3-pin GDS unknown — pin map absent; SI2300: pin map absent; FS2310: pin map absent; AO3422: pin map absent |
| Voltage | 30 V | 20 V | 20 V | 60 V | 20 V / 60 V — below target; SI2300: below target; FS2310: higher VDS; AO3422: higher VDS |
| Current | 5.8 A | 4 A | 6 A | 3 A | 4 A / 6 A / 3 A — derate load; SI2300: nominally higher; FS2310: about half; AO3422: derate load |
| Resistance | 30 mΩ | 30 mΩ | 48 mΩ | 100 mΩ | 30 mΩ / 48 mΩ / 100 mΩ / 105 mΩ — RDS similar; SI2300: more loss; FS2310: more loss; AO3422: higher loss |
Verified drop-in options for AO3400-HXY are limited in the current batch. Review candidates marked Strong match or Datasheet verified, and validate package, pinout, and electrical limits before committing a BOM change.