
PAKER Microelectronics (Shenzhen) Co., Ltd.
Strong P-Channel alternative in the same SOT-23 package with higher current and lower on-resistance.
JSM2301S is a -20V, -1.8A P-Channel MOSFET in a SOT-23 package. A strong alternative is SI2323, which offers improved electrical ratings in the same package, pending pinout verification.
Candidate offers superior electrical performance (higher current, lower Rds(on)).
Both use the same SOT-23 package, but pinout must be confirmed.
SI2323 is a strong candidate for direct replacement after pinout verification, as it matches key specs and package.
SI2323 offers an upgrade path with significantly better Rds(on) and current handling in the same package.
The primary risk is assuming pin-for-pin compatibility without checking the datasheet, although SOT-23 MOSFETs often share a standard pinout.

PAKER Microelectronics (Shenzhen) Co., Ltd.
Strong P-Channel alternative in the same SOT-23 package with higher current and lower on-resistance.
| Feature / factor | JSM2301S | SI2323 | Alt 2 | Alt 3 | Compatibility / risk |
|---|---|---|---|---|---|
| Polarity Or Type | P-Channel | P-Channel | P-Channel — Channel type matches. | ||
| Package | SOT-23 | SOT-23 | SOT-23 — Package matches, enabling form-fit compatibility. | ||
| Voltage | -20 V | -20 V | -20 V — Drain-Source Voltage (Vds) matches. | ||
| Current | -1.8 A | -5 A | -5 A — Continuous Drain Current (Id) is significantly higher. | ||
| Rds On Ohm | 250 mΩ @ -2.5V | 45 mΩ @ -4.5V | 45 mΩ @ -4.5V — On-resistance is much lower, improving efficiency. | ||
| Power | 0.35 W | 1.31 W | 1.31 W — Power dissipation is higher, improving thermal margin. |
SI2323 is a strong alternative, offering higher current (-5A) and lower on-resistance (45mΩ) in the same SOT-23 package. It is a potential upgrade but requires datasheet review.