
Murata Electronics
A strong upgrade with matching 3.6nH inductance and 0402 package, plus higher current and lower DCR.
Find replacements for the Murata LQG15HS3N6S02D 3.6nH inductor. This page analyzes several alternatives, highlighting key parametric differences and potential upgrade paths for your design.
Different construction (wirewound vs multilayer) and potential inductance mismatch require validation.
All candidates share the same 0402 package, ensuring physical compatibility.
No exact direct replacement is listed, but LQW15AN3N6G80D is a strong candidate with matching inductance and superior performance. However, it uses a different internal construction (wirewound vs. multilayer) which requires engineering review.
LQW15AN3N6G80D and LQW15AN3N6C10D are strong upgrade paths, matching the 3.6nH inductance with significantly better current handling and lower resistance.
The primary risk is the different inductor construction (wirewound vs. multilayer), which can alter high-frequency impedance characteristics critical for RF circuits. Some candidates also have different inductance values.

Murata Electronics
A strong upgrade with matching 3.6nH inductance and 0402 package, plus higher current and lower DCR.
| Feature / factor | LQG15HS3N6S02D | LQW15AN3N6C10D | LQW15AN3N6G80D | LQW15AN3N3G80D | Compatibility / risk |
|---|---|---|---|---|---|
| Inductance H | 3.6 nH | 3.6 nH | 3.6 nH | 3.3 nH | 3.6 nH / 3.3 nH / 3.5 nH — Inductance value matches target.; LQW15AN3N6G80D: Inductance value matches target.; LQW15AN3N3G80D: Candidate inductance is ~8% lower.; LQW15AN3N5G80D: Candidate inductance is ~3% lower. |
| Current A | 0.3 A | 0.9 A | 1.95 A | 2.0 A | 0.9 A / 1.95 A / 2.0 A — Higher current rating.; LQW15AN3N6G80D: Significantly higher current rating.; LQW15AN3N3G80D: Significantly higher current rating.; LQW15AN3N5G80D: Significantly higher current rating. |
| Dcr Ohm | 0.18 Ω | 0.04 Ω | 0.035 Ω | 0.03 Ω | 0.04 Ω / 0.035 Ω / 0.03 Ω — Lower DC resistance.; LQW15AN3N6G80D: Significantly lower DC resistance.; LQW15AN3N3G80D: Significantly lower DC resistance.; LQW15AN3N5G80D: Significantly lower DC resistance. |
| Construction | Multilayer | Wirewound | Wirewound | - | Wirewound — Different construction may affect HF performance.; LQW15AN3N6G80D: Different construction may affect HF performance. |
LQW15AN3N6G80D is a strong candidate, offering the same 3.6nH inductance and package but with much higher current rating (1.95A vs 0.3A) and lower DCR (0.035Ω vs 0.18Ω). Review is needed due to its different internal construction.