
PAKER Microelectronics (Shenzhen) Co., Ltd.
A P-Channel SOT-23 MOSFET with better current and RDS(on), but a critically lower voltage rating.
Finding a substitute for the NCE2309 P-Channel MOSFET requires matching its -60V rating and SOT-23 package. Alternatives exist but may have different electrical parameters requiring design review.
Significant VDS downgrade from -60V to -20V in the closest candidate.
SOT-23 is a common package, and candidates with matching form factor are available.
No direct, drop-in replacement for the NCE2309 was identified. All candidates require careful review of electrical parameters, especially the VDS voltage rating.
For applications operating well below 20V, SI2323 could be considered after verification. Otherwise, a new component search focusing on -60V P-Channel SOT-23 MOSFETs is recommended.
The primary risk is finding a P-Channel MOSFET with a matching -60V VDS rating in a SOT-23 package. Many candidates are N-Channel or have a lower voltage rating.

PAKER Microelectronics (Shenzhen) Co., Ltd.
A P-Channel SOT-23 MOSFET with better current and RDS(on), but a critically lower voltage rating.
| Feature / factor | NCE2309 | SI2323 | Alt 2 | Alt 3 | Compatibility / risk |
|---|---|---|---|---|---|
| Polarity Or Type | P-Channel | P-Channel | P-Channel — FET channel type matches. | ||
| Package | SOT-23 | SOT-23 | SOT-23 — Package matches, enabling form-fit compatibility. | ||
| Voltage | -60 V | -20 V | -20 V — VDS is significantly lower, posing a high risk. | ||
| Current | -1.6 A | -5 A | -5 A — Higher current handling capability. | ||
| Rds On Ohm | 190 mΩ | 45 mΩ | 45 mΩ — Lower on-resistance improves efficiency. | ||
| Vgs Th | -2.6V max | -0.4V to -1.0V | -0.4V to -1.0V — Lower gate threshold may affect gate drive compatibility. |
There are no direct drop-in replacements found. The SI2323 is a potential alternative for low-voltage applications (<20V) due to its lower voltage rating, but offers better current and on-resistance.