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18N10 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

18N10 product

18N10

MOSFETs - Single

MOSFETN-Channel100VPower Switch

The GOFORD 18N10 is a 100V, 25A N-Channel Power MOSFET in a TO-252 package, optimized for efficient power switching and DC/DC conversion.

Best for

  • DC/DC converters
  • General power switching

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal design and PCB layout

Key specifications

VDS
100 V
ID
25 A
RDS(on)
< 53 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095

Application

Power ManagementIndustrial

Datasheet

b93019da3fd2248567db0f2c1410681d_products-detail.php.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 18N10: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The 18N10 is an N-Channel Enhancement Mode Power MOSFET from GOFORD, utilizing trench technology for low RDS(ON) and gate charge.