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1EDN8511B AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

1EDN8511B product

1EDN8511B

Gate Drivers

Gate DriverLow-SideInfineon

The 1EDN8511B is a high-performance single-channel low-side gate driver optimized for driving normal level and superjunction MOSFETs.

Best for

  • Driving superjunction MOSFETs
  • Fast-switching power applications

Avoid if

  • Logic level MOSFETs requiring lower UVLO thresholds

Check before use

  • Supply voltage range and gate charge of the target MOSFET

Key specifications

Source/Sink Current
4 A / 8 A
UVLO Threshold
8.0 V
Propagation Delay
19 ns

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial

Datasheet

f12c7b09e249432eace6f32158367b14_2404071822_Infineon-Technologies-1EDN8511BXUSA1_C3655509.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 1EDN8511B: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a single-channel low-side gate driver IC from Infineon, featuring a 4 A source and 8 A sink output stage.