ProjectsPricingInsights

1N60G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

1N60G product

1N60G

MOSFETs - Single

MOSFETN-Channel600VSOT-223

The 1N60G is a 600V, 1A N-Channel enhancement mode MOSFET in a SOT-223 package, designed for efficient switching in battery protection and power supply applications.

Best for

  • Battery protection
  • Load switching
  • UPS systems

Avoid if

  • High-current applications exceeding 1A
  • Applications requiring extremely low RDS(ON)

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
600V
ID
1A
RDS(ON)
12Ω

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Control

Datasheet

9d3f5f653a6ad480a14580127fe2b240_2401261512_HXY-MOSFET-1N60G_C20611923.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 1N60G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The 1N60G is an N-Channel enhancement mode MOSFET using advanced trench technology, rated for 600V and 1A.