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2DB1386R-13 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2DB1386R-13 product

2DB1386R-13

Transistors - Bipolar (BJT) - Single

PNPTransistorSOT89Medium Power

The 2DB1386R-13 is a 20V PNP medium power transistor designed for high-current applications in an SOT89 surface-mount package.

Best for

  • Power switching
  • Medium power amplification

Avoid if

  • Applications requiring >20V collector-emitter voltage

Check before use

  • Thermal dissipation requirements on the PCB

Key specifications

Polarity
PNP
VCEO
-20 V
IC
-5 A
hFE
180-390

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1
ECCN
EAR99
HTSUS
8541290075.0

Application

Power ManagementGeneral Switching

Datasheet

Diodes-Inc.-2DB1386R-13.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2DB1386R-13: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP medium power transistor capable of handling up to -5A of continuous collector current.