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2ED020I12-FI AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2ED020I12-FI product

2ED020I12-FI

MOSFETs - Single

Gate DriverIGBT DriverHigh Voltage

The 2ED020I12-FI is a dual-channel high-voltage gate driver designed for IGBTs and MOSFETs up to 1.2 kV, featuring integrated protection and signal conditioning.

Best for

  • High-voltage motor drives
  • Industrial power conversion

Avoid if

  • Low-voltage applications where simpler drivers suffice

Check before use

  • Supply voltage range (14-18V)
  • Isolation requirements

Key specifications

Max Voltage
1.2 kV
Peak Output Current
+1 A / -2 A
Supply Voltage
14 V to 18 V

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
3
ECCN
-
HTSUS
-

Application

Industrial Motor ControlPower Inverters

Datasheet

pYYBAGNuQzeAU9YVAArXTNaFu0o696.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2ED020I12-FI: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual-channel, high-voltage gate driver IC from Infineon, capable of driving N-channel power MOSFETs or IGBTs in high-side and low-side configurations up to 1.2 kV.