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2ED2101S06FXUMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2ED2101S06FXUMA1 product

2ED2101S06FXUMA1

Gate Drivers

Gate Driver650VInfineon

The 2ED2101S06F is a 650V high-side and low-side gate driver designed for power MOSFETs and IGBTs, featuring an integrated bootstrap diode for simplified design.

Best for

  • Motor drives
  • Inverters
  • SMPS

Avoid if

  • Applications requiring isolated gate drive

Check before use

  • Thermal dissipation requirements

Key specifications

Max Offset Voltage
650 V
Peak Source/Sink Current
290 mA / 700 mA
Propagation Delay
90 ns

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
MSL2
ECCN
-
HTSUS
-

Application

Motor DrivesPower Supplies

Datasheet

aedd2dccb49d2c00aacb75195dc9b8fa_2404071823_Infineon-Technologies-2ED2101S06FXUMA1_C3655605.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2ED2101S06FXUMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage, high-speed gate driver IC for N-channel MOSFETs and IGBTs, capable of operating up to 650V.