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2KJ7107DFN AI Analysis:
Specs, Applications & Alternatives

AI summary

2KJ7107DFN product

2KJ7107DFN

FETs

P-ChannelMOSFETSMD

The 2KJ7107DFN is a P-channel trench MOSFET designed for high-speed switching in compact SMD applications.

Best for

  • Portable electronics
  • Load switching
  • Power management

Avoid if

  • High-voltage applications exceeding -20V

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
-20 V
ID
-6.0 A
RDS(on)
40 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

871b5460bfa3834ea073b22994d6b1b9_2003261832_KEXIN-2KJ7107DFN_C499622.pdf

800 KB

Datasheet AI

CAD Models

EDA symbol, PCB footprint, and 3D model for this component. Supported tools include Altium, KiCad, Eagle, and more.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel MOSFET featuring a -20V drain-source voltage and -6.0A continuous drain current, housed in a DFN2X2-6L package.