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2N5550TFR AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2N5550TFR product

2N5550TFR

Transistors - Bipolar (BJT) - Single

NPNBJTAmplifier

The 2N5550 is a standard NPN epitaxial silicon transistor optimized for amplifier circuits, offering a 140V collector-emitter breakdown voltage and 600mA collector current capacity.

Best for

  • General purpose amplification

Avoid if

  • High-power switching applications exceeding 600mA

Check before use

  • Thermal dissipation limits

Key specifications

VCEO
140 V
IC
600 mA
hFE
60-250

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
Not Applicable
ECCN
EAR99
HTSUS
8541.21.0075

Application

Amplifier

Datasheet

Fairchild-Semiconductor-company-11.pdf

800 KB

Datasheet AI

CAD Models

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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The 2N5550 is an NPN bipolar junction transistor (BJT) primarily used in amplifier applications.