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2N5551 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2N5551 product

2N5551

Bipolar (BJT)

NPNBJTHigh VoltageSOT-23

The 2N5551 is a high-voltage NPN BJT capable of handling 160V VCEO and 600mA IC, making it a reliable choice for high-voltage switching and amplification.

Best for

  • High-voltage switching
  • Signal amplification

Avoid if

  • Applications exceeding 160V
  • High-power dissipation requirements >300mW

Check before use

  • Thermal design
  • Pinout configuration

Key specifications

VCEO
160 V
IC
600 mA
hFE
80 - 250
Package
SOT-23

Compliance & Environment

RoHS
RoHS Compliant
REACH
nan
MSL
nan
ECCN
nan
HTSUS
nan

Application

PowerIndustrialConsumer

Datasheet

fa46aeb68dfb4152bd21b1fb92ab388f.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2N5551: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The 2N5551 is a high-voltage NPN bipolar junction transistor (BJT) commonly used in general-purpose switching and amplification circuits.