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2N5551G-B-AB3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2N5551G-B-AB3-R product

2N5551G-B-AB3-R

Discrete Semiconductor Products

NPNHigh VoltageSwitchingAmplifier

The 2N5551G-B-AB3-R is a high-voltage NPN transistor from UTC, optimized for switching and amplification in telephone and audio circuits.

Best for

  • Telephone switching circuits
  • General purpose amplification

Avoid if

  • Applications requiring >600mA collector current
  • High-power switching exceeding 500mW

Check before use

  • Thermal dissipation limits in SOT-89

Key specifications

VCEO
160V
IC
600mA
hFE
150-240

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Telephone SwitchingAmplifiers

Datasheet

92be3c667ba4ce99ddba7578e15b6030.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2N5551G-B-AB3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a high-voltage NPN silicon transistor designed for switching and amplification, featuring a 160V collector-emitter breakdown voltage.