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2N5551L-B-T92-K AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2N5551L-B-T92-K product

2N5551L-B-T92-K

Discrete Semiconductor Products

NPNHigh VoltageTransistor

The 2N5551L-B-T92-K is a high-voltage NPN transistor designed for switching and amplification, featuring a 160V collector-emitter breakdown voltage and 600mA current capacity.

Best for

  • Telephone switching circuits
  • General purpose amplification

Avoid if

  • High-frequency applications exceeding 100MHz
  • Power stages requiring >600mA

Check before use

  • Pin assignment (E-B-C)

Key specifications

VCEO
160V
IC
600mA
hFE
150-240

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Telephone switchingAmplifiers

Datasheet

7886b5c4332632acf1b96452c5b81145_1808272136_UTC-Unisonic-Tech-2N5551L-B-T92-K_C87880.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2N5551L-B-T92-K: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN silicon transistor from UTC, optimized for high-voltage switching and amplification tasks.