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2N7002-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2N7002-HXY product

2N7002-HXY

MOSFETs - Single

MOSFETN-ChannelSOT-2360V

The 2N7002-HXY is a 60V, 0.3A N-Channel MOSFET in an SOT-23 package, optimized for low-power switching and battery protection.

Best for

  • Battery protection circuits
  • Small load switching
  • UPS control

Avoid if

  • High-current applications exceeding 300mA
  • High-temperature environments without adequate cooling

Check before use

  • Gate drive voltage levels
  • Thermal resistance (RθJA)

Key specifications

VDS
60 V
ID
0.3 A
RDS(on)
2 Ω

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Switching

Datasheet

211cbb1c76a37ab4cc378966f373499f_2305151521_HXY-MOSFET-2N7002-HXY_C4748728.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2N7002-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using advanced trench technology, designed for efficient switching in low-power applications.