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2N7002BKS,115 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2N7002BKS,115 product

2N7002BKS,115

MOSFETs - Single

MOSFETDualN-ChannelTrench60V

The 2N7002BKS is a dual N-channel Trench MOSFET in a compact SOT363 package, ideal for space-constrained switching and driver applications.

Best for

  • Relay drivers
  • High-speed line drivers
  • Low-side load switches

Avoid if

  • Applications requiring high power dissipation beyond 295mW

Check before use

  • Thermal footprint on PCB
  • Gate drive voltage levels

Key specifications

VDS
60V
ID
300mA
RDS(on)
1.6Ω

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

PowerGeneral

Datasheet

NXP-Semiconductors-company-13.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2N7002BKS,115: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET using Trench technology, designed for high-speed switching in a small SOT363 package.