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2N7002K-T1-GE3-ES AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2N7002K-T1-GE3-ES product

2N7002K-T1-GE3-ES

MOSFETs - Single

N-ChannelMOSFET60VSOT23-3L

The 2N7002K-T1-GE3-ES is a 60V N-channel MOSFET in a SOT23-3L package, designed for low-power switching and DC-DC conversion.

Best for

  • Portable electronics
  • DC-DC converters
  • Load switching

Avoid if

  • High-current applications exceeding 0.38A

Check before use

  • Gate threshold voltage (0.8V to 2.5V)

Key specifications

VDS
60 V
ID
0.38 A
RDS(on)
1.75 Ohm

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

7bfc1f2e68bb75b5f2f631ab80acb687_2210271630_ElecSuper-2N7002K-T1-GE3-ES_C5224211.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2N7002K-T1-GE3-ES: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode MOSFET utilizing trench technology, optimized for low gate charge and efficient power switching.