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2N7002PW,115 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2N7002PW,115 product

2N7002PW,115

FETs

MOSFETN-ChannelTrenchSOT323

The 2N7002PW is a 60V, 310mA N-channel Trench MOSFET in a compact SOT323 package, ideal for space-constrained switching applications.

Best for

  • High-speed line drivers
  • Low-side load switching
  • Relay driving

Avoid if

  • High-power applications requiring higher current or lower RDS(on)

Check before use

  • Ensure the NRND status does not impact long-term production plans.

Key specifications

VDS
60 V
ID
310 mA
RDS(on)
1.6 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Application

IndustrialConsumer

Datasheet

NXP-Semiconductors-company-13.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2N7002PW,115: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode Trench MOSFET designed for high-speed switching in small-signal applications.