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2N7002VC-7 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2N7002VC-7 product

2N7002VC-7

MOSFETs - Arrays

MOSFETDual ChannelN-ChannelSOT563

The 2N7002VC-7 is a dual N-channel enhancement mode MOSFET in a compact SOT563 package, suitable for high-reliability, space-constrained applications.

Best for

  • Space-constrained switching applications
  • High-reliability automotive or industrial designs

Avoid if

  • High-power applications exceeding 150mW dissipation

Check before use

  • Gate threshold voltage compatibility

Key specifications

Drain-Source Voltage
60 V
Continuous Drain Current
280 mA
Package
SOT563

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
Level 1
ECCN
EAR99
HTSUS
8541210095.0

Application

General Switching

Datasheet

Diodes-Inc.-2N7002VC-7.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2N7002VC-7: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for low on-resistance and fast switching in a small SOT563 surface-mount package.