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2N7002WT1G-ES AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2N7002WT1G-ES product

2N7002WT1G-ES

MOSFETs - Single

N-ChannelMOSFET60VSOT-323

The 2N7002WT1G-ES is a 60V N-channel enhancement mode MOSFET in a SOT-323 package, designed for efficient power switching and DC-DC conversion.

Best for

  • Small signal switching
  • DC-DC conversion
  • Load switching

Avoid if

  • High current applications exceeding 300mA

Check before use

  • Thermal dissipation requirements
  • Gate threshold voltage

Key specifications

Vdss
60 V
Id
0.3 A
RDS(on)
1.85 Ohm (Typ)

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

a7adc3f7b1183969b1ef2e82fd460a4b_2210271630_ElecSuper-2N7002WT1G-ES_C5224239.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2N7002WT1G-ES: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode MOSFET utilizing trench technology, optimized for low gate charge and low on-resistance.