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2SA1201Y AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SA1201Y product

2SA1201Y

Transistors - Bipolar (BJT) - Single

PNPBJTHigh VoltageSOT-89

The 2SA1201Y is a high-voltage PNP BJT in a SOT-89 package, ideal for general-purpose switching and amplification tasks.

Best for

  • General purpose switching
  • Amplification

Avoid if

  • Applications requiring higher than 0.8A collector current
  • High-frequency RF applications

Check before use

  • Thermal dissipation limits
  • Polarity requirements

Key specifications

VCEO
-120 V
IC
-0.8 A
hFE
120-240

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General Purpose

Datasheet

4d9b7192babd74d4ede83537c5149ed6_2001050504_Shikues-2SA1201Y_C475454.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SA1201Y: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP bipolar junction transistor (BJT) manufactured by SHIKUES, designed for high-voltage applications up to -120V.