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2SB1132SQ-Q AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SB1132SQ-Q product

2SB1132SQ-Q

Discrete Semiconductor Products

PNPBJTSOT-89

The 2SB1132SQ-Q is a general-purpose PNP bipolar transistor designed for low saturation voltage applications in an SOT-89 package.

Best for

  • General switching
  • Low-voltage power management

Avoid if

  • High-frequency RF applications
  • Power dissipation exceeding 500mW

Check before use

  • Thermal dissipation requirements
  • Gain group (hFE)

Key specifications

VCEO
32V
IC
1A
PD
500mW
hFE
82-390

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General PurposePower Management

Datasheet

o4YBAF5y4TaAfelsAAvtFH-_T2Y142.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SB1132SQ-Q: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP bipolar junction transistor (BJT) manufactured by PJSEMI, optimized for low saturation voltage.