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2SB1151L-Y-T60-K AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SB1151L-Y-T60-K product

2SB1151L-Y-T60-K

Transistors - Bipolar (BJT) - Single

PNPTransistorTO-126Power

The 2SB1151L-Y-T60-K is a PNP power transistor optimized for high-current, low-saturation applications in a TO-126 package.

Best for

  • Power switching
  • General purpose amplification

Avoid if

  • Applications requiring surface-mount (SMD) assembly

Check before use

  • Thermal dissipation requirements

Key specifications

Polarity
PNP
VCEO
-60 V
IC
-5 A

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial Control

Datasheet

56070ee085c270a577dc8fa6ae4060f9_2212091108_UTC-Unisonic-Tech-2SB1151L-Y-T60-K_C5310379.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SB1151L-Y-T60-K: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP silicon transistor from UTC designed for high-current switching and amplification, featuring low collector-emitter saturation voltage.