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2SB1189T100R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SB1189T100R product

2SB1189T100R

Transistors - Bipolar (BJT) - Single

PNPBJTMedium Power

The 2SB1189T100R is a PNP medium power transistor from ROHM, rated for 80V and 0.7A, suitable for general-purpose switching and amplification.

Best for

  • General-purpose amplification
  • Switching circuits

Avoid if

  • New designs requiring long-term availability

Check before use

  • Thermal management requirements
  • Current lifecycle status

Key specifications

Polarity
PNP
VCEO
-80 V
IC
-0.7 A
hFE
120 - 390

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

General Purpose

Datasheet

2SB1189T100R-Rohm-datasheet-12544469.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SB1189T100R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP bipolar junction transistor (BJT) designed for medium power applications, featuring high breakdown voltage and current handling capabilities.