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2SB1260G-Q-AB3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SB1260G-Q-AB3-R product

2SB1260G-Q-AB3-R

Integrated Circuits (ICs)

PNPPower TransistorSOT-89

The 2SB1260G-Q-AB3-R is a PNP epitaxial planar power transistor from UTC, optimized for high-voltage and high-current switching applications.

Best for

  • General purpose switching
  • Power management circuits

Avoid if

  • Applications requiring >0.5W continuous power dissipation without adequate PCB cooling

Check before use

  • Pinout configuration (B-C-E)

Key specifications

VCEO
-80 V
IC
-1 A
hFE
120-270

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerGeneral

Datasheet

cfcdf7dbf2a7d7c0e52559315403784b.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SB1260G-Q-AB3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP silicon power transistor designed for high-voltage (80V) and high-current (1A) applications, housed in a surface-mount SOT-89 package.