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2SB1386G-R-AB3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SB1386G-R-AB3-R product

2SB1386G-R-AB3-R

Transistors - Bipolar (BJT) - Single

PNPTransistorSOT-89

The 2SB1386G-R-AB3-R is a PNP silicon transistor designed for low-frequency applications, featuring a -20V collector-emitter voltage and -5A current capacity in an SOT-89 package.

Best for

  • Low-frequency switching
  • General purpose amplification

Avoid if

  • High-frequency applications
  • Applications requiring >20V VCEO

Check before use

  • Thermal management in SOT-89 package

Key specifications

Polarity
PNP
VCEO
-20 V
IC
-5 A
hFE Range
180-390

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General Purpose

Datasheet

180262ada3343ad95d065c2b016879dc_2212091108_UTC-Unisonic-Tech-2SB1386G-R-AB3-R_C5310371.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SB1386G-R-AB3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP silicon transistor from UTC, optimized for low-frequency applications with low saturation voltage.