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2SB562 C AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SB562 C product

2SB562 C

Bipolar (BJT)

PNPBJTTO-92Power Amplifier

The 2SB562 C is a PNP BJT transistor designed for low-frequency power amplification, featuring a -20V collector-emitter rating and -1A current capacity in a TO-92 package.

Best for

  • Low-frequency power amplification

Avoid if

  • High-frequency applications
  • New designs requiring long-term availability

Check before use

  • Pinout configuration
  • Thermal dissipation requirements

Key specifications

Polarity
PNP
VCEO
-20 V
IC
-1 A

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

Power Amplification

Datasheet

7d6b2a3056583dff4567af785ad1a99c_HL(豪林)&2SB562 C.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SB562 C: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP bipolar junction transistor (BJT) primarily used for low-frequency power amplification.