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2SB649 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SB649 product

2SB649

Transistors - Bipolar (BJT) - Single

PNPBJTTO-126Power Transistor

The 2SB649 is a PNP power transistor designed for low-frequency amplification, featuring a -120V VCEO and -1.5A collector current in a TO-126 package.

Best for

  • Low-frequency power amplification
  • Complementary output stages

Avoid if

  • High-frequency switching applications
  • Applications requiring >1W dissipation without adequate cooling

Check before use

  • Thermal management requirements
  • hFE classification

Key specifications

VCEO
-120 V
IC
-1.5 A
hFE
60-320

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Amplifiers

Datasheet

723772607c2023336258dc031927252c_1811122016_Jiangsu-Changjing-Electronics-Technology-Co---Ltd--2SB649_C16056.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SB649: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The 2SB649 is a PNP bipolar junction transistor (BJT) manufactured in a TO-126 package, primarily used in low-frequency power amplifier circuits.