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2SB649AG-C-AB3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SB649AG-C-AB3-R product

2SB649AG-C-AB3-R

Discrete Semiconductor Products

PNPBJTPower Transistor

The 2SB649AG-C-AB3-R is a PNP bipolar power transistor from UTC, designed for low-frequency power amplification.

Best for

  • Low frequency power amplification

Avoid if

  • High frequency switching applications

Check before use

  • Thermal dissipation limits of the SOT-89 package

Key specifications

VCEO
160V
IC
1.5A
hFE
100-200

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Amplifier

Datasheet

e02fa6742f9289d2ca2b1aeb016df1aa.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SB649AG-C-AB3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a PNP silicon bipolar power transistor packaged in SOT-89, featuring a 160V VCEO and 1.5A collector current capability.