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2SC2655G-Y-AE3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SC2655G-Y-AE3-R product

2SC2655G-Y-AE3-R

Transistors - Bipolar (BJT) - Single

NPNTransistorSOT-23

The 2SC2655G-Y-AE3-R is a general-purpose NPN power transistor in a SOT-23 package, optimized for switching and amplification tasks.

Best for

  • Power switching
  • General amplification

Avoid if

  • High-power applications exceeding 350mW dissipation

Check before use

  • Thermal management in SOT-23 package

Key specifications

VCEO
50 V
IC
2 A
hFE
120-240

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerGeneral

Datasheet

5958a6514a7aa5842ddc786ce36d7f4a_1808280123_UTC-Unisonic-Tech-2SC2655GY-AE3-R_C171548.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SC2655G-Y-AE3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN silicon transistor from UTC, specifically designed for power switching and amplification.