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2SC2881G-Y-AB3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SC2881G-Y-AB3-R product

2SC2881G-Y-AB3-R

Transistors - Bipolar (BJT) - Single

NPNBJT120VSOT-89

The 2SC2881G-Y-AB3-R is a high-voltage NPN silicon transistor from UTC, optimized for voltage and power amplification in a compact SOT-89 surface-mount package.

Best for

  • Voltage amplification
  • Power amplification

Avoid if

  • Applications requiring >800mA collector current
  • High-power designs exceeding 500mW dissipation without heat sinking

Check before use

  • Thermal design
  • hFE rank (Y: 120-240)

Key specifications

VCEO
120 V
IC
800 mA
hFE
120 - 240

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power AmplifierVoltage Amplifier

Datasheet

b8d7b257fd9cf2db9a691485ed3f6416_2212091108_UTC-Unisonic-Tech-2SC2881G-Y-AB3-R_C5310373.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SC2881G-Y-AB3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN bipolar junction transistor (BJT) designed for voltage and power amplifier applications, featuring a 120V collector-emitter breakdown voltage.