2SC3356G-A-AE2-R Datasheet, Specs, Alternatives & ECAD | UTC(友顺) | PartGenie

AI summary

2SC3356G-A-AE2-R product

The 2SC3356G-A-AE2-R is a high-frequency NPN transistor optimized for low-noise amplification and switching in compact electronic circuits.

Best for

High-frequency signal amplification
Low-voltage switching
Battery-powered portable devices

Avoid if

High-power switching applications
Circuits requiring >12V collector-emitter voltage

Check before use

Thermal management in high-density layouts
hFE rank compatibility

Key specifications

VCEO: 12 V
IC: 100 mA
fT: 7 GHz

Compliance & Environment

RoHS: RoHS

Application

RF AmplificationGeneral Switching

Datasheet

1808280111_UTC-Unisonic-Tech-2SC3356G-A-AE2-R_C171546.pdf

800 KB

CAD Models

Download ECAD models for 2SC3356G-A-AE2-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN silicon transistor from UTC, specifically designed for high-frequency, low-noise amplifier applications and low-voltage switching.