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2SC3357-E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SC3357-E product

2SC3357-E

Transistors - Bipolar (BJT) - RF

NPNRF TransistorSOT-89

The 2SC3357-E is a high-performance NPN RF transistor in an SOT-89 package, optimized for low-noise, high-gain amplification at frequencies up to 6.5 GHz.

Best for

  • RF signal amplification
  • High-frequency communication circuits

Avoid if

  • Low-frequency switching applications where standard general-purpose transistors suffice

Check before use

  • Thermal dissipation requirements on the PCB

Key specifications

fT
6.5 GHz
VCEO
12 V
hFE
125-250

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

RF Amplification

Datasheet

b91b15a7a2f4b6dc09fca0fea0b6b4bd_2002251133_KEXIN-2SC3357-E_C489324.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SC3357-E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a silicon NPN epitaxial planar transistor designed for high-frequency RF applications.