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2SC3585 R45 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SC3585 R45 product

2SC3585 R45

Transistors - Bipolar (BJT) - Single

RF TransistorNPNLow Noise

The 2SC3585 is a high-performance NPN silicon epitaxial transistor designed for high-frequency, low-noise applications in VHF, UHF, and CATV systems.

Best for

  • VHF/UHF low-noise amplifiers
  • CATV broadband amplifiers

Avoid if

  • High-power switching applications
  • Circuits requiring high emitter-base reverse voltage

Check before use

  • HFE classification (R43-R45)
  • Thermal management for 200mW dissipation

Key specifications

fT
10 GHz
VCEO
10 V
IC
35 mA

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

RF Amplification

Datasheet

8870371ec674cd5923f03d726c7cd074_Slkor(萨科微)&2SC3585 R45.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SC3585 R45: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The 2SC3585 is a planar NPN silicon epitaxial bipolar transistor optimized for high-frequency, low-noise amplification.