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2SC3646S-TD-E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SC3646S-TD-E product

2SC3646S-TD-E

Transistors - Bipolar (BJT) - Single

NPNBJT100VSOT-89

The 2SC3646S-TD-E is a 100V, 1A NPN bipolar transistor in a SOT-89-3 package, optimized for high-density hybrid ICs.

Best for

  • Hybrid ICs
  • General purpose switching

Avoid if

  • High-power applications exceeding 500mW without heat sinking

Check before use

  • Thermal dissipation requirements
  • Gain rank (R, S, or T)

Key specifications

VCEO
100 V
IC
1 A
hFE
100-400
Package
SOT-89-3

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Hybrid ICsSwitching

Datasheet

ON-Semiconductor-company-79.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SC3646S-TD-E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN bipolar transistor from onsemi, featuring high breakdown voltage and fast switching capabilities.