ProjectsPricingInsights

2SC3649T-TD-E AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SC3649T-TD-E product

2SC3649T-TD-E

Transistors - Bipolar (BJT) - Single

NPNBipolar160V1.5A

The 2SC3649T-TD-E is an NPN bipolar transistor from onsemi, designed for high-density applications requiring high breakdown voltage and current capacity.

Best for

  • High-density hybrid ICs
  • General purpose switching
  • Voltage regulation

Avoid if

  • Applications exceeding 1.5A continuous current
  • High-frequency RF applications beyond its fT range

Check before use

  • Thermal dissipation requirements
  • hFE rank compatibility

Key specifications

VCEO
160 V
IC
1.5 A
hFE
200-400

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

General PurposePower Management

Datasheet

ON-Semiconductor-company-79.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SC3649T-TD-E: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN bipolar transistor in a PCP (SOT-89) package, optimized for high-density hybrid ICs using FBET and MBIT processes.