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2SC5006G-AN3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SC5006G-AN3-R product

2SC5006G-AN3-R

Transistors - Bipolar (BJT) - Single

NPNRF TransistorVHF/UHF

The 2SC5006G-AN3-R is a high-frequency NPN transistor optimized for low-noise, small-signal amplification in VHF and UHF applications.

Best for

  • VHF/UHF RF amplifiers
  • Low-noise signal processing

Avoid if

  • High-power switching applications
  • Applications requiring >20V collector-base voltage

Check before use

  • Thermal dissipation limits in SOT-523 package

Key specifications

Transition Frequency
4.5 GHz
Collector-Emitter Voltage
12 V
Collector Current
100 mA

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

RF Amplifiers

CAD Models

Download ECAD models for 2SC5006G-AN3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN epitaxial silicon transistor from UTC, specifically designed for low-noise, small-signal amplification in the VHF to UHF frequency range.