It is an NPN medium power transistor designed for high-speed switching and low-frequency amplification, featuring a 60V collector-emitter voltage and 500mA collector current capacity.
2SC5876U3T106Q AI Analysis:
Datasheet, Specs, Alternatives & ECAD
AI summary
2SC5876U3T106Q
Transistors - Bipolar (BJT) - Single
Key specifications
- Polarity
- NPN
- VCEO
- 60 V
- IC
- 500 mA
- Package
- SOT-323
Compliance & Environment
- RoHS
- Compliant
- REACH
- -
- MSL
- -
- ECCN
- -
- HTSUS
- -
Application
General SwitchingAmplification
Datasheet
CAD Models
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EDA Symbol
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PCB Footprint
Land pattern for PCB layout
3D Model
STEP file for mechanical design
KiCad Library
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Alternative components
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