2SC6026MFVG,L3XG Datasheet, Specs, Alternatives & ECAD | TOSHIBA | PartGenie

AI summary

2SC6026MFVG,L3XG product

The 2SC6026MFVG,L3XG is a general-purpose NPN transistor designed for amplifier applications, offering high voltage (50V) and current (150mA) capabilities in a compact VESM package.

Best for

General-purpose amplification
Space-constrained designs

Avoid if

High-power switching applications exceeding 150mA

Check before use

hFE classification
Thermal dissipation limits

Key specifications

VCEO: 50 V
IC: 150 mA
hFE: 120-400

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

General Amplifier

Datasheet

d6ba25135b34d5d93235e254891755e5_2306140934_TOSHIBA-2SC6026MFVG-L3XG-T_C7421250.pdf

800 KB

CAD Models

Download ECAD models for 2SC6026MFVG,L3XG: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a silicon NPN epitaxial transistor manufactured by Toshiba, optimized for general-purpose amplifier applications.