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2SD1007Q AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SD1007Q product

2SD1007Q

Transistors - Bipolar (BJT) - Single

NPNBJT120VSOT-89

The 2SD1007Q is a 120V NPN transistor in a SOT-89 package, designed for general-purpose switching and amplification.

Best for

  • General-purpose switching
  • Signal amplification

Avoid if

  • Applications requiring higher current than 0.7A
  • Circuits exceeding 120V collector-emitter voltage

Check before use

  • Thermal dissipation requirements in the SOT-89 footprint

Key specifications

VCEO
120 V
IC
0.7 A
hFE
135-270

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General Switching

Datasheet

5fa63ce847f493a905d98004d5c81b5d_2001050504_Shikues-2SD1007Q_C475482.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SD1007Q: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The 2SD1007Q is an NPN bipolar junction transistor (BJT) manufactured by SHIKUES, featuring a 120V collector-emitter voltage and 0.7A collector current capacity.