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2SD1060G-S-AB3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SD1060G-S-AB3-R product

2SD1060G-S-AB3-R

Transistors - Bipolar (BJT) - Single

NPNTransistorPower

The 2SD1060G-S-AB3-R is an NPN planar silicon transistor designed for power switching applications, featuring a 5A collector current and low saturation voltage.

Best for

  • Power switching
  • General purpose amplification

Avoid if

  • Applications requiring high-frequency switching beyond its bandwidth

Check before use

  • Thermal dissipation requirements for the SOT-89 package

Key specifications

VCEO
50 V
IC
5 A
VCE(SAT)
0.4 V

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

CAD Models

Download ECAD models for 2SD1060G-S-AB3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN silicon transistor from UTC, packaged in SOT-89, suitable for general-purpose power switching.