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2SD1664G-R-AB3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SD1664G-R-AB3-R product

2SD1664G-R-AB3-R

Transistors - Bipolar (BJT) - Single

NPNTransistorMedium Power

The 2SD1664G-R-AB3-R is a medium-power NPN epitaxial planar transistor from UTC, housed in an SOT-89 package.

Best for

  • General purpose switching
  • Medium power amplification

Avoid if

  • High-frequency applications exceeding 150MHz

Check before use

  • Thermal dissipation limits in SOT-89

Key specifications

VCEO
32 V
IC
1 A
hFE Range
180-390

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

General Purpose

Datasheet

bedac91add11a72995d915eeb65956b7_2212091108_UTC-Unisonic-Tech-2SD1664G-R-AB3-R_C5310378.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SD1664G-R-AB3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN silicon transistor designed for medium power applications, featuring low saturation voltage.