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2SD1898G-Q-AB3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SD1898G-Q-AB3-R product

2SD1898G-Q-AB3-R

Discrete Semiconductor Products

NPNPower TransistorSOT-89

The 2SD1898G-Q-AB3-R is an NPN silicon power transistor designed for general-purpose switching and amplification, featuring an 80V collector-emitter breakdown voltage and 1A current capacity.

Best for

  • General purpose switching
  • Low-power amplification

Avoid if

  • High-power applications exceeding 500mW dissipation

Check before use

  • Thermal dissipation requirements
  • hFE rank compatibility

Key specifications

VCEO
80V
IC
1A
hFE (Rank Q)
120-270

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Switching

Datasheet

07499d988025cfdcb7a12039290c6742_1808280054_UTC-Unisonic-Tech-2SD1898G-Q-AB3-R_C171544.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SD1898G-Q-AB3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN silicon power transistor manufactured by UTC, housed in a surface-mount SOT-89 package.