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2SD667L-C-T9N-K AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SD667L-C-T9N-K product

2SD667L-C-T9N-K

Transistors - Bipolar (BJT) - Single

NPNTransistorPower Amplifier

The 2SD667L-C-T9N-K is a general-purpose NPN silicon transistor optimized for low-frequency power amplification.

Best for

  • Low-frequency power amplification
  • General switching applications

Avoid if

  • High-frequency RF applications
  • Applications exceeding 1A collector current

Check before use

  • Thermal dissipation requirements
  • Pinout configuration

Key specifications

VCEO
80 V
IC
1 A
hFE Rank
C (100-200)

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Amplification

Datasheet

060ecd9997f7f2b663f330eeb938b625_2212091108_UTC-Unisonic-Tech-2SD667L-C-T9N-K_C5310436.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SD667L-C-T9N-K: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an NPN epitaxial silicon transistor from UTC, primarily used as a low-frequency power amplifier.