It is a silicon NPN bipolar junction transistor (BJT) housed in a TO-252 plastic package, designed for low-frequency power amplification applications.
2SD669AD AI Analysis:
Specs, Applications & Alternatives
AI summary
Key specifications
- VCEO
- 160 V
- IC
- 1.5 A
- hFE
- 60-320
Compliance & Environment
- RoHS
- Yes
- REACH
- -
- MSL
- -
- ECCN
- -
- HTSUS
- -
Application
Power Amplification
Datasheet
Alternative components
Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.
