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2SK3666G-3-AE3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SK3666G-3-AE3-R product

2SK3666G-3-AE3-R

MOSFETs - Single

JFETN-ChannelSOT-23UTC

The 2SK3666G-3-AE3-R is an N-channel JFET from UTC, optimized for low-frequency signal processing and sensor applications in an SOT-23 package.

Best for

  • Low-frequency amplifiers
  • Impedance conversion
  • Infrared sensor circuits

Avoid if

  • High-frequency switching applications
  • High-power requirements

Check before use

  • IDSS rank classification
  • Gate-source voltage limits

Key specifications

Type
N-Channel JFET
VDSS
30 V
IDSS Range (Rank 3)
1.2 ~ 3.0 mA

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

AmplifierSensor Interface

Datasheet

e3e2f23591d957ab231702f75f196499_2212091108_UTC-Unisonic-Tech-2SK3666G-3-AE3-R_C5310366.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SK3666G-3-AE3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel junction silicon FET (JFET) manufactured by UTC, designed for low-frequency general-purpose amplification and impedance conversion.