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2SK508G-K51-AE3-R AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

2SK508G-K51-AE3-R product

2SK508G-K51-AE3-R

Transistors - JFETs

JFETN-ChannelRF Amplifier

The 2SK508G-K51-AE3-R is an N-channel JFET optimized for high-frequency amplification in wireless and tuner applications.

Best for

  • AM tuners
  • Cordless telephone RF stages
  • General high-frequency amplification

Avoid if

  • High-power switching applications

Check before use

  • Gate-source voltage polarity and magnitude

Key specifications

IDSS
10-20 mA
VGS(off)
-0.6 to -3.5 V
Ciss
4.8 pF

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

RF Amplification

Datasheet

eebd74e78c249948da56df0ff36df26a_2312211044_UTC-Unisonic-Tech-2SK508G-K51-AE3-R_C171542.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 2SK508G-K51-AE3-R: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel silicon JFET from UTC, designed specifically for high-frequency amplifier circuits.