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3DD13009AN AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

3DD13009AN product

3DD13009AN

Bipolar (BJT)

NPN BJTTO-3P400 V12 A120 WSwitching transistor

3DD13009AN is a TO-3P NPN power BJT for high-voltage switching, rated to 400 V VCEO, 12 A DC collector current, and 120 W at Tc=25°C.

Best for

  • Electronic lamp ballasts
  • Electronic transformers
  • High-frequency switching power supplies

Avoid if

  • A MOSFET gate-drive-only design is required
  • Verified package dimensions or qualification documentation are mandatory

Check before use

  • Base-drive capability at load current
  • Switching losses at operating frequency
  • Heatsink design using the 1.04 °C/W maximum junction-to-case thermal resistance
  • Current lifecycle and distributor availability

Key specifications

Collector-emitter voltage
400 V VCEO / 700 V VCES
DC collector current
12 A
Power dissipation
120 W at Tc=25°C
Package
TO-3P through-hole
VCE(sat)
1.5 V max at IC=8 A, IB=1.6 A

Compliance & Environment

RoHS
RoHS product; Pb-containing solder noted as RoHS-exempt
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

High-frequency switching power suppliesElectronic lamp ballastsElectronic transformers

Datasheet

1778fc1541dadc51b735cd57382c2ca3_华润华晶&3DD13009AN.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 3DD13009AN: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

3DD13009AN is an NPN silicon triple-diffused bipolar power transistor in a TO-3P through-hole package. It has a 400 V VCEO rating, 700 V VCES rating, 12 A DC collector-current rating, and 120 W dissipation rating at Tc=25°C.