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3N10-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

3N10-HXY product

3N10-HXY

MOSFETs - Single

MOSFETN-Channel100VSOT-23

The 3N10-HXY is a 100V N-Channel MOSFET in a SOT-23 package, optimized for low-power switching and battery protection.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power applications exceeding 1W dissipation

Check before use

  • Thermal design
  • Gate drive voltage

Key specifications

VDS
100 V
ID
3 A
RDS(ON)
248 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerConsumer

Datasheet

977e3c5c818172dcef82a99061953df5_2212161130_HXY-MOSFET-3N10-HXY_C4748729.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for 3N10-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using trench technology, rated for 100V and 3A.